PART |
Description |
Maker |
HI-3584PQT-10 HI-3584CJIF HI-3584PCI HI-3584PCIF H |
Enhanced ARINC 429 3.3V Serial Transmitter and Dual Receiver 1 CHANNEL(S), 125K bps, SERIAL COMM CONTROLLER, PQFP52 Enhanced ARINC 429 3.3V Serial Transmitter and Dual Receiver 增强型ARINC 429 3.3双串行发送器和接收器 Enhanced ARINC 429 3.3V Serial Transmitter and Dual Receiver 1 CHANNEL(S), 125K bps, SERIAL COMM CONTROLLER, PQCC64
|
Holt Integrated Circuits, Inc. HOLT INTEGRATED CIRCUITS INC
|
ADUM3211 |
Dual-Channel Digital Isolator, Enhanced System-Level ESD Reliability
|
Analog Devices
|
ADUM3200CRZ-RL7 ADUM3201CRZ-RL7 ADUM3200BRZ-RL7 AN |
Dual-Channel, Digital Isolators, Enhanced System-Level ESD Reliability SPECIALTY ANALOG CIRCUIT, PDSO8
|
Analog Devices, Inc. ANALOG DEVICES INC
|
LATBT66B-ST-1 LATBT66B |
Enhanced optical Power LED (HOP2000 / ATON?) Enhanced optical Power LED (HOP2000 / ATON㈢) Enhanced optical Power LED (HOP2000 / ATON?? Hyper Multi TOPLED? amber/ true gree...
|
N.A. OSRAM GmbH Infineon
|
SCN2661 SCN2661AC1A28 SCN2661AC1N28 SCN2661BA1F28 |
(SCN2661 / SCN68661) Enhanced programmable communications interface EPCI Enhanced programmable communications interface EPCI 1 CHANNEL(S), 1M bps, SERIAL COMM CONTROLLER, PQCC28 Enhanced programmable communications interface EPCI 1 CHANNEL(S), 1M bps, SERIAL COMM CONTROLLER, PDIP28 SM Series Subminiature Basic Switch, Single Pole Double Throw (SPDT), 250 Vac, 5 A, Pin Plunger Actuator, Solder Termination 1 CHANNEL(S), 1M bps, SERIAL COMM CONTROLLER, CDIP28
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
NTHD4502N NTHD4502NT1 NTHD4502NT1G |
Power MOSFET 30 V, 2.9 A, Dual N-Channel, ChipFET™ POWER MOSFET 30 V, 3.9 A, DUAL N−CHANNEL CHIPFET Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET 2200 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ONSEMI[ON Semiconductor]
|
IRF7103Q IRF7103QTR IRF7103QN |
N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO Power MOSFET(Vdss=50V) 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package 50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
FDS8962C |
30V Dual N & P-Channel PowerTrench MOSFET Dual N & P-Channel Power Trench
|
Fairchild Semiconductor Corporation
|
IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
FDMQ8203 |
100V Dual N-Channel and Dual P-Channel PowerTrenchMOSFET, GreenBridgeSeries of High-Efficiency Bridge Rectifiers GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench? MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
|
Fairchild Semiconductor
|
PH8230E |
N-channel Trenchmos (tm) enhanced logic level FET N-CHANNEL TRENCHMOSTM ENHANCED LOGIC LEVEL FET
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|